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                    PRODUCT

                    首页 ? Product ? CVD Coating Equipment ? PECVD Plasma Enhanced Chemical Vapor Deposition Equipment Series

                    PECVD-300type Plasma Enhanced Chemical Vapor Deposition
                    编号:SN20151119105335236
                    类别:PECVD Plasma Enhanced Chemical Vapor Deposition Equipment Series
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                      Applications

                      The device uses a plasma enhanced chemical vapor deposition techniques, the deposition of silicon nitride material on different substrates of optical glass, silicon, quartz and stainless steel, a thin film of amorphous silicon and microcrystalline silicon for the preparation of amorphous and microcrystalline silicon thin film solar cell devices. It can be widely used in universities, research institutes and small batch preparation of thin film materials.

                      Structure

                        vacuum reaction chamber, cover components, hot wire frame, substrate heating station, gas path, extraction system, installation of the machine, vacuum measurement and electronic control system and other parts.

                      Technical Data

                       

                      model

                      PECVD-300

                      vacuum chamber

                      vacuum chamber size : about Ф300mm x300mmH

                      vacuum system configuration

                      molecular pumpmechanical pumproots pumpvalve

                      ultimate pressure

                      ≤6.67x10-5 Paafter baking

                      Vacuum recovery time

                      40mins up to 6.6x10-4 PaSystem extraction from the atmosphere

                      cover components

                      Inlet gas plate size: 120 mm Φ, the air flow evenly into the reaction chamber; Coupling electrode in structure; Inside and outside the shield to avoid interference with other equipment

                      heat guide frame component

                      35V20A Tungsten filament heating: 4 ; Filament surface maximum temperature: 2000 ° C; Hot wire and the substrate can be adjusted between 10 ~ 20 mm; Hot wire can add dc power supply: 35V, 20A

                      preparation room turntable

                      sample size

                      Φ100mm

                      height setting

                      Substrate and gaseous disks can adjust between 20 ~ 80 mm

                      heat

                      the highest temperature substrate heated 800±1

                      bias voltage

                      Substrate negative bias -200V

                      gas path system

                      Mass flow controller: 4 path; 500 SCCM, 200 SCCM, 100 SCCM, 50 SCCM: 1 path; Manual  globe valve:6; Pneumatic globe valve: 6; Manual control flow meter: 5 L/min; DG16 deflation valve, pipe, joints etc.: 1 path

                      water-cooling system

                      cooling-water machinecooling capacity 1.5kw

                       

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