首页 ? Product ? CVD Coating Equipment ? PECVD Plasma Enhanced Chemical Vapor Deposition Equipment Series
Applications
The device uses a plasma enhanced chemical vapor deposition techniques, the deposition of silicon nitride material on different substrates of optical glass, silicon, quartz and stainless steel, a thin film of amorphous silicon and microcrystalline silicon for the preparation of amorphous and microcrystalline silicon thin film solar cell devices. It can be widely used in universities, research institutes and small batch preparation of thin film materials.
Structure
Central transfer chamber, 3 PECVD deposition chamber and a technique in/out slice chamber, and reserved 2 chamber interface.
Technical Data
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model |
Cluster-IV |
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central transfer chamber |
size：aboutФ1000mm x280mm（H） |
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in/out slice chamber |
size：300mm×300mm×300mm |
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deposition chamber |
size：260mm×260mm×300mm，1、2 number PECVD chamber，3NO. VHF-PECVD chamber |
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vacuum system configuration |
central transfer chamber |
Molecular pump, mechanical pump, the INFICON range gauge, BPG400, valves, etc |
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in/out slice chamber |
Mechanical pump, pneumatic inflation valve |
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deposition chamber |
Imported molecular pumps, roots pumps, mechanical pumps, composite digital vacuum measurement gauge and imported film gauge, valves etc. each one set |
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ultimate pressure |
central transfer chamber |
≤2×10-4 Pa（after baking)） |
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in/out slice chamber |
≤6.67×100 Pa (after baking) |
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deposition chamber |
≤2×10-6 Pa (after baking) |
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Vacuum recovery time |
central transfer chamber |
30mins up to 6.67×10-3Pa（Short-term exposure to the atmosphere and filled with dry nitrogen start pumping） |
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in/out slice chamber |
30mins up to 10Pa（Short-term exposure to the atmosphere and filled with dry nitrogen start pumping） |
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deposition chamber |
30mins up to 3×10-4 Pa（Short-term exposure to the atmosphere and filled with dry nitrogen start pumping） |
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vacuum leak rate |
central transfer chamber |
≤ 5.0×10-8 Pa.L/S |
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in/out slice chamber |
≤ 5.0×10-7 Pa.L/S |
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deposition chamber |
≤ 1.0×10-8 Pa.L/S。 |
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vacuum degree after stop pump 12 hours |
central transfer chamber |
≤15Pa |
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in/out slice chamber |
≤50Pa |
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deposition chamber |
≤1 Pa |
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baking device |
in/out slice chamber |
150 ℃ baking device and a set of bracket, imported temperature control table and iodine tungsten lamp heater closed-loop control |
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sample holder |
deposition chamber |
Using molybdenum materials, substrate size 114mm×114mm×3mm |
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heater and temperature control power |
deposition chamber |
The substrate temperature range -350 ℃ continuously adjustable, temperature control accuracy ± 1 ℃; import temperature table temperature control heating, K thermocouple feedback temperature |
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gas path system（pecvd use） |
intrinsic chamber 1 path，contain SiH4，H2，N2； N type doping room 1 road, contain SiH4, H2, N2, PH3, NH3, CO2; P-type doping inlet chamber 1 road, contain SiH4, H2, N2, CH4, trimethyl boron (TMB), CO2;
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