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                    PRODUCT

                    首页 ? Product ? CVD Coating Equipment ? PECVD Plasma Enhanced Chemical Vapor Deposition Equipment Series

                    PECVD-300type Plasma Enhanced Chemical Vapor Deposition
                    编号:SN20151119105158504
                    类别:PECVD Plasma Enhanced Chemical Vapor Deposition Equipment Series
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                      Applications

                      The device uses a plasma enhanced chemical vapor deposition techniques, the deposition of silicon nitride material on different substrates of optical glass, silicon, quartz and stainless steel, a thin film of amorphous silicon and microcrystalline silicon for the preparation of amorphous and microcrystalline silicon thin film solar cell devices. It can be widely used in universities, research institutes and small batch preparation of thin film materials.

                      Structure

                       

                      Central transfer chamber, 3 PECVD deposition chamber and a technique in/out slice chamber, and reserved 2 chamber interface.

                      Technical Data

                      model

                      Cluster-IV

                      central transfer chamber

                      sizeaboutФ1000mm x280mmH

                      in/out slice chamber

                      size300mm×300mm×300mm

                      deposition chamber

                      size260mm×260mm×300mm12 number PECVD chamber3NO. VHF-PECVD chamber

                      vacuum system configuration

                      central transfer chamber

                      Molecular pump, mechanical pump, the INFICON range gauge, BPG400, valves, etc

                      in/out slice chamber

                      Mechanical pump, pneumatic inflation valve

                      deposition chamber

                      Imported molecular pumps, roots pumps, mechanical pumps, composite digital vacuum measurement gauge and imported film gauge, valves etc. each one set

                      ultimate pressure

                      central transfer chamber

                      ≤2×10-4 Paafter baking)

                      in/out slice chamber

                      ≤6.67×100 Pa (after baking)

                      deposition chamber

                      ≤2×10-6 Pa (after baking)

                      Vacuum recovery time

                      central transfer chamber

                      30mins up to 6.67×10-3PaShort-term exposure to the atmosphere and filled with dry nitrogen start pumping

                      in/out slice chamber

                      30mins up to 10PaShort-term exposure to the atmosphere and filled with dry nitrogen start pumping

                      deposition chamber

                      30mins up to 3×10-4 PaShort-term exposure to the atmosphere and filled with dry nitrogen start pumping

                      vacuum leak rate

                      central transfer chamber

                      ≤ 5.0×10-8 Pa.L/S

                      in/out slice chamber

                      ≤ 5.0×10-7 Pa.L/S

                      deposition chamber

                      ≤ 1.0×10-8 Pa.L/S

                      vacuum degree after stop pump 12 hours

                      central transfer chamber

                      ≤15Pa

                      in/out slice chamber

                      ≤50Pa

                      deposition chamber

                      ≤1 Pa

                      baking device

                      in/out slice chamber

                      150 baking device and a set of bracket, imported temperature control table and iodine tungsten lamp heater closed-loop control

                      sample holder

                      deposition chamber

                      Using molybdenum materials, substrate size 114mm×114mm×3mm

                      heater and temperature control power

                      deposition chamber

                      The substrate temperature range -350 continuously adjustable, temperature control accuracy ± 1 ; import temperature table temperature control heating, K thermocouple feedback temperature

                      gas path systempecvd use

                      intrinsic chamber 1 pathcontain SiH4H2N2

                      N type doping room 1 road, contain SiH4, H2, N2, PH3, NH3, CO2;

                      P-type doping inlet chamber 1 road, contain SiH4, H2, N2, CH4, trimethyl boron (TMB), CO2;

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